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SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001 COMPLEMENTARY TYPE - BSP43
BSP33
C
PARTMARKING DETAIL -
BSP33 C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P TOT T j:T stg VALUE -90 -80 -5 -2 -1 2 -55 to +150 UNIT V V V A A W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO MIN. -90 -80 -5 -100 -50 -0.25 -0.5 -1.0 -1.2 30 100 50 300 20 120 100 500 650 pF pF MHz ns ns MAX. UNIT V V V nA A V V V V CONDITIONS. I C=-100A I C=-10mA I E=-10A V CB=-60V V CB=-60V, T amb=125C I C =-150mA, I B=-15mA I C =-500mA, I B=-50mA I C=-150mA, I B=-15mA I C =-500mA, I B=-50mA I C =-100A, V CE =-5V I C =-100mA, V CE =-5V I C =-500mA, V CE =-5V V CB =-10V, f =1MHz V EB =-0.5V, f =1MHz I C=-50mA, V CE=-10V f =35MHz V CC =-20V, I C =-100mA I B1 =-I B2 =-5mA
Collector Cut-Off Current I CBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency Turn-On Time Turn-Off Time V CE(sat) V BE(sat) h FE
C obo C ibo fT T on T off
*Measured under pulsed conditions. Spice parameter data is available upon request for this device
TBA

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